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Patterned Growth: Patterned Growth of P-Type MoS2 Atomic Layers Using Sol-Gel as Precursor (Adv. Funct. Mater. 35/2016)
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文摘
On page 6371, W. Zhou, P. A. Hu, and co-workers report a novel approach for growing stable p-type MoS2 atomic layers in large scale by using Mo-containing sol-gel, including 1% tungsten (W). The small tungsten oxide clusters contribute to the p-type behavior. Availability of regular arrays with different shapes via soft-lithography techniques holds great promise for highly integrated electronics and flexible device applications.

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