Flexible Electronics: Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide (Small 41/2016)

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• 作者：Tanmoy Das ; Xiang Chen ; Houk Jang ; Il-Kwon Oh ; Hyungjun Kim and Jong-Hyun Ahn
• 刊名：Small
• 出版年：2016
• 出版时间：November 2, 2016
• 年：2016
• 卷：12
• 期：41
• 页码：5650
• 全文大小：4400K
• ISSN：1613-6829

文摘

On page 5720, J.-H. Ahn and co-workers demonstrate large area, flexible hybrid complementary metal–oxide–semiconductor (CMOS) logic inverter based on the combination of ultrathin p-channel c-Si nanomembranes and n-channel chemical vapor deposition MoS₂ transistors. Such integration of high performance Si technology with transition-metal dichalcogenides offers reliable electrical and mechanical properties and promises a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.