Metal-Semiconductor Phase-Transition in WSe_2(1-x)Te_2x Monolayer

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• 作者：Peng Yu ; Junhao Lin ; Linfeng Sun ; Quang Luan Le ; Xuechao Yu ; Guanhui Gao ; Chuang-Han Hsu ; Di Wu ; Tay-Rong Chang ; Qingsheng Zeng ; Fucai Liu ; Qi Jie Wang ; Horng-Tay Jeng ; Hsin Lin ; Achim Trampert ; Zexiang Shen ; Kazu Suenaga and Zheng Liu
• 刊名：Advanced Materials
• 出版年：2017
• 出版时间：January 25, 2017
• 年：2017
• 卷：29
• 期：4
• 全文大小：3117K
• ISSN：1521-4095

文摘

A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe₂ (WSe_2(1−x)Te_2x, where x = 0%–100%). The optical bandgaps of the WSe_2(1−x)Te_2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.