High-Performance, Air-Stable Field-Effect Transistors Based on Heteroatom-Substituted Naphthalenediimide-Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V⁻¹ s⁻¹

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• 作者：Zhiyuan Zhao ; Zhihong Yin ; Huajie Chen ; Liping Zheng ; Chunguang Zhu ; Long Zhang ; Songting Tan ; Hanlin Wang ; Yunlong Guo ; Qingxin Tang and Yunqi Liu
• 刊名：Advanced Materials
• 出版年：2017
• 出版时间：January 25, 2017
• 年：2017
• 卷：29
• 期：4
• 全文大小：2093K
• ISSN：1521-4095

文摘

Rational heteroatom engineering is applied to develop high-performance electron-transporting naphthalenediimide copolymers. Top-gate field-effect transistors fabricated from selenophene-containing polymers achieve an ultrahigh electron mobility of 8.5 cm² V⁻¹ s⁻¹ and excellent air-stability. The results demonstrate that the incorporation of selenophene heterocycles into the polymers can improve the film-forming ability, intermolecular interaction, and carrier transport significantly.