Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

详细信息    查看全文

• 作者：Sen Liu ; Nianduan Lu ; Xiaolong Zhao ; Hui Xu ; Writam Banerjee ; Hangbing Lv ; Shibing Long ; Qingjiang Li ; Qi Liu and Ming Liu
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：December 28, 2016
• 年：2016
• 卷：28
• 期：48
• 页码：10623-10629
• 全文大小：3128K
• ISSN：1521-4095

文摘

Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.