Graphene-β-Ga₂O₃ Heterojunction for Highly Sensitive Deep UV Photodetector Application

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• 作者：Wei-Yu Kong ; Guo-An Wu ; Kui-Yuan Wang ; Teng-Fei Zhang ; Yi-Feng Zou ; Dan-Dan Wang and Lin-Bao Luo
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：December 28, 2016
• 年：2016
• 卷：28
• 期：48
• 页码：10725-10731
• 全文大小：1735K
• ISSN：1521-4095

文摘

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga₂O₃) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.