Design of Ku-band GaN HEMT power amplifier based on multi-bias statistical model

详细信息    查看全文

• 作者：Zhikai Chen ; Yuehang Xu ; Changsi Wang ; Zhang Wen and Ruimin Xu
• 刊名：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
• 出版年：2017
• 出版时间：January/February 2017
• 年：2017
• 卷：30
• 期：1
• 全文大小：615K
• ISSN：1099-1204

文摘

A design method for microwave GaN high-electron mobility transistor (HEMT) power amplifier based on equivalent circuit parameters multi-bias statistical models is presented. The statistical modeling method includes principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is validated by comparing original and Monte Carlo-simulated means, standard deviations, correlation matrix, and S-parameters. A Ku-band GaN HEMT power amplifier is designed with high drain efficiency by using the established statistical model for demonstration purpose. The simulated results are statistically indistinguishable from the measured results. This method is suitable for GaN HEMT power amplifier design and yield analysis. Copyright