Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design

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• 作者：Xue-Feng Cheng ; Er-Bo Shi ; Xiang Hou ; Shu-Gang Xia ; Prof. Jing-Hui He ; Prof. Qing-Feng Xu ; Prof. Hua Li ; Prof. Na-Jun Li ; Prof. Dong-Yun Chen and Prof. Jian-Mei Lu
• 刊名：Chemistry – An Asian Journal
• 出版年：2017
• 出版时间：January 3, 2017
• 年：2017
• 卷：12
• 期：1
• 页码：45-51
• 全文大小：1627K
• ISSN：1861-471X

文摘

Herein, two molecules based on urea and thiourea, which differ by only a single atom, were designed, successfully synthesized, and fabricated into resistive random-access memory devices (RRAM). The urea-based molecule showed binary write-once-read-many (WORM) storage behavior, whereas the thiourea-based molecule demonstrated ternary storage behavior. Atomic-force microscopy (AFM) and X-ray diffraction (XRD) patterns show that both molecules have smooth morphology and ordered layer-by-layer lamellar packing, which is beneficial for charge transportation and, consequently, device performance. Additionally, the optical and electrochemical properties indicate that the thiourea-based molecule has a lower bandgap and may be polarized by trapped charges, thus the formation of a continuous conductive channel and electric switching occurs at lower bias voltage, which results in ternary WORM behavior. This study, together with our previous work on single-atom substitution, may be useful to tune and improve device performance in the future design of organic memory.