In situ sulfurization to generate Sb₂(Se_1 − xS_x)₃ alloyed films and their application for photovoltaics

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• 作者：Bo Yang ; Sikai Qin ; Ding-jiang Xue ; Chao Chen ; Yi-su He ; Dongmei Niu ; Han Huang and Jiang Tang
• 刊名：Progress in Photovoltaics: Research and Applications
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：25
• 期：1
• 页码：113-122
• 全文大小：772K
• ISSN：1099-159X

文摘

Because of its tunable band gap and band position, Sb₂(Se_1 − xS_x)₃ (0 ≤ x ≤ 1) is a promising light-absorbing material for photovoltaic device applications. However, no systematic study on the synthesis and characterization of single-phase polycrystalline Sb₂(Se_1 − xS_x)₃ thin films has been reported. Through introducing in situ sulfurization into the rapid thermal evaporation process, a series of single-phase, highly crystalline Sb₂(Se_1 − xS_x)₃ films with x = 0.09, 0.20, 0.31, and 0.43 were successfully obtained, with the corresponding band gap, band position and film morphology fully revealed. Futhermore, solar cells with superstrate ITO/CdS/Sb₂(Se_1 − xS_x)₃/Au structure were fabricated and carefully optimized. Finally, a champion device having 5.79% solar conversion efficiency was obtained employing uniform Sb₂(Se_0.80S_0.20)₃ absorber layer. Our experimental investigation confirmed that Sb₂(Se_1 − xS_x)₃ is indeed a very promising absorber material worth further optimization. Copyright