Precisely Aligned Monolayer MoS₂ Epitaxially Grown on h-BN basal Plane

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• 作者：Hua Yu ; Zhengzhong Yang ; Luojun Du ; Jing Zhang ; Jinan Shi ; Wei Chen ; Peng Chen ; Mengzhou Liao ; Jing Zhao ; Jianling Meng ; Guole Wang ; Jianqi Zhu ; Rong Yang ; Dongxia Shi ; Lin Gu and Guangyu Zhang
• 刊名：Small
• 出版年：2017
• 出版时间：February 17, 2017
• 年：2017
• 卷：13
• 期：7
• 全文大小：2130K
• ISSN：1613-6829

文摘

Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS₂) on hexagonal boron nitride (h-BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS₂ domains on the basal plane of h-BN by a low-pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS₂ and h-BN basal plane are present. Domains with same orientation stitch and form single-crystal, domains with different orientations stitch and from mirror grain boundaries. In this way, the grain boundary is minimized and a continuous film stitched by these two types of domains with only mirror grain boundaries is obtained. This growth strategy is also applicable to other 2D materials growth.