P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

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• 作者：GongTan Li ; Bo-Ru Yang ; Chuan Liu ; Chia-Yu Lee ; Yuan-Chun Wu ; Po-Yen Lu ; ShaoZhi Deng ; Han-Ping D. Shieh and NingSheng Xu
• 刊名：SID Symposium Digest of Technical Papers
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：47
• 期：1
• 页码：1186-1188
• 全文大小：1036K
• ISSN：2168-0159

文摘

IZTO-TFT was inherently having high mobility; however, the stability is a concern hindering it from practical application. In this paper, we used nitrogen doping to improve the NGBS stability by a factor of 80%. Furthermore, we also adopted IZTO (high-conductive)/IZTO:N double active layer structure to avoid mobility degradation.