High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN:Fe template

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• 作者：Yunfeng Chen ; Hai Lu ; Dunjun Chen ; Fangfang Ren ; Rong Zhang and Youdou Zheng
• 刊名：physica status solidi (c)
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：13
• 期：5-6
• 页码：374-377
• 全文大小：637K
• ISSN：1610-1642a

文摘

In this work, high-voltage photoconductive semiconductor switches (PCSSs) with inter-digitated contact electrodes are directly fabricated on semi-insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼10¹⁰ Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm² within a rise time of ∼20 ns. The fall time of the photocurrent pulse is mainly RC time limited. (