Ostwald ripening in segregated SixN/SiyN multilayers

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• 作者：Xiaofan Jiang ; Zhongyuan Ma ; Jie Yu ; Sheng Ren ; Huafeng Yang ; Wei Li ; Jun Xu ; Ling Xu ; Kunji Chen ; Xinfan Huang and Duan Feng
• 刊名：physica status solidi (a)
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：213
• 期：7
• 页码：1878-1884
• 全文大小：1673K
• ISSN：1862-6319

文摘

In this study, we investigate the microstructure and formation of segregated silicon nanocrystals (nc-Si) from annealed Si-rich Si_xN/Si_yN multilayers. It is found the nc-Si are separated and arranged in every sublayer with two different grain sizes. Through XPS and Raman analysis, it is discovered that Si atoms diffuse from the Si_yN sublayers with smaller nc-Si to the Si_xN sublayers with larger nc-Si during annealing. Meanwhile, the grain size of Si_xN sublayers increase and that of Si_yN sublayers decrease, compared to single layer sample. It is suggested that the atomic diffusion with grain size change phenomenon is ascribed to coalescence-like growth followed by Ostwald ripening process, which eventually results in Si atoms transport from small Si clusters in Si_yN sublayers to large Si cluster in Si_xN sublayers and forms the segregated nc-Si multilayers. This work gives us better understanding of the nc-Si growth and atomic diffusion in annealed Si-rich multilayers.