Enhanced InGaN/GaN photoelectrodes for visible-light-driven hydrogen generation by surface roughening

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• 作者：Ting Zhi ; Tao Tao ; Bin Liu ; Mingxue Li ; Zhe Zhuang ; Jiangping Dai ; Yi Li ; Guogang Zhang ; Wenjun Luo ; Zili Xie ; Peng Chen ; Dunjun Chen ; Zhaosheng Li ; Ping Han ; Zhigang Zou ; Rong Zhang and Youdou Zheng
• 刊名：physica status solidi (a)
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：213
• 期：10
• 页码：2704-2708
• 全文大小：781K
• ISSN：1862-6319

文摘

III-Nitride semiconductor materials are considered as promising candidates for photoelectrodes (PEs) due to their adjustable direct band gap covering a very broad spectral range. In this study, InGaN/GaN based p–i–n photoelectrodes have been fabricated and nano-sized surface roughening process has been applied. The photocurrent gets 2.5 times enhancement and the incident photon conversion efficiency (IPCE) is improved to be ∼30% at the wavelength of 400 nm. In addition, the turn-on voltages of InGaN/GaN-based PEs have been effectively reduced from +0.8 V down to about −0.4 V (vs. reversible hydrogen potential, RHE). Such improvements are mainly attributed to reduced dislocation density, increased surface area, and optimized build-in electrical field. These findings give innovative insight to improve photoelectrochemical devices for hydrogen generation.