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Improved electrical properties of SiO2-added BaTiO3 ceramics by microwave sintering
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文摘

BT and SiO2 added ceramics were obtained by microwave sintering at low temperature.

Pure BT ceramic showed very high dielectric constant (11022) at Curie point.

Increasing SiO2 addition, Ba2TiSi2O8 was detected and columnar grains appeared.

Improvement of densification and second phase were effective to improve the BDS.

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