Direct and quantitative understanding of the non-Ohmic contact resistance in organic and oxide thin-film transistors
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- 作者：Chuan Liua ; c ; liuchuan5@sysu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Takeo Minarid ; Yong Xub ; Bo-ru Yanga ; Hui-Xuan Chena ; Qiutan Kea ; Xuying Liud ; Hsiang Chih Hsiaoe ; Chia Yu Leee ; Yong-Young Nohb ; yynoh@dongguk.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：Output characteristics ; Non-Ohmic contact ; Contact interfacial resistance ; Thin-film transistors
- 刊名：Organic Electronics
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：27
- 期：Complete
- 页码：253-258
- 全文大小：1150 K
文摘
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Fast extraction of contact resistance from output characteristics.
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Good accuracy comparable to traditional methods.
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No assumption on the charge injection mechanism.
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Quantitative comparison between Schottky contacts.
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Suitable for general transistors with any materials.
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