Ultra rapid fabrication of p-type Li-doped Mg₂Si_0.4Sn_0.6 synthesized by unique melt spinning method

详细信息    查看全文

• 作者：Xiaodan Tang^a ; ^b ; Guiwen Wang^a ; Yong Zheng^a ; Yumeng Zhang^a ; Kunling Peng^a ; ^b ; Lijie Guo^a ; Shuxia Wang^a ; Min Zeng^c ; ^d ; Jiyan Dai^c ; Guoyu Wang^b ; Xiaoyuan Zhou^a ; ^{xiaoyuan2013@cqu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：p-type Mg2(Si ; Sn) ; Melt spinning ; Thermoelectric properties
• 刊名：Scripta Materialia
• 出版年：2016
• 出版时间：1 April 2016
• 年：2016
• 卷：115
• 期：Complete
• 页码：52-56
• 全文大小：879 K

文摘

In this work, we successfully synthesized p-type Mg_2(1-x)Li_2xSi_0.4Sn_0.6 (x = 0.00, 0.01, 0.03, 0.07, 0.09) samples using a home-made melt spinning system combined with spark plasma sintering. Compared with the samples prepared by a traditional method, the processing time is reduced from typically several days to less than one hour. It is found that the electrical conductivity rises rapidly with the increase of Li content owing to the enhanced carrier density, while the Seebeck coefficient decreases concomitantly to some extent. Meanwhile, Li doping dramatically reduces the thermal conductivity, leading to an enhanced figure of merit ZT ~ 0.58 at 760 K.