Preparation of MoSe2 nano-islands array embedded in a TiO2 matrix for photo-regulated resistive switching memory
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- 作者：Pengde Hana ; hanpengde@163.com" class="auth_mail" title="E-mail the corresponding author ; Bai Sunb ; Sen Chenga ; Fangli Yua ; Baoxiang Jiaoa ; Qisheng Wua
- 关键词：Resistive switching ; Photo-controlled memory ; MoSe2 nano-islands ; TiO2 matrix ; Anodic aluminum oxide (AAO) template
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 April 2016
- 年：2016
- 卷：664
- 期：Complete
- 页码：619-625
- 全文大小：2092 K
文摘
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The composite of MoSe2 nano-islands array inserted into TiO2 matrix was prepared.
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We demonstrate a memory device with Ag/[MoSe2/TiO2]/FTO structure.
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The device presents stable photo-controlled resistive switching memory behaviors.
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The mechanism for the photo-controlled memory device is discussed in detail.
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