The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering

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• 作者：Jens Emmerlich ; Stanislav Mrá ; z ; Rony Snyders ; Kaiyun Jiang ; Jochen M. Schneider
• 关键词：Pulsed plasma ; Magnetron sputtering ; Deposition rate
• 刊名：Vacuum
• 出版年：2008
• 出版时间：14 April 2008
• 年：2008
• 卷：82
• 期：8
• 页码：867-870
• 全文大小：146 K

文摘

In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti [Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307].