Improved Photocatalytic Performance under Solar Light Irradiation by Integrating Wide-band-gap Semiconductors, SnO₂, SnTaO₃ and Sn₂Ta₂O₇

详细信息    查看全文

• 作者：Junyu Lang ; Shuwei wang ; Chongyan Li ; Xiaojing Wang ; ^{wang_xiao_jing@hotmail.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：photocatalysis ; visible light respond ; semiconductor ; wide band gap ; Sn2Ta2O7-SnO2-SnTaO3
• 刊名：Materials Today: Proceedings
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：3
• 期：2
• 页码：424-428
• 全文大小：345 K

文摘

In this work, a novel ternary heterostructure assembled by wide-band-gap semiconductors (Sn₂Ta₂O₇, SnO₂, and SnTaO₃) is successfully prepared via a one-step hydrothermal approach. The small particles of SnO₂ and SnTaO₃ formed via an excess Sn resource were well-dispersed onto the outside surface of the hollow spheres Sn₂Ta₂O₇. It was observed the composite Sn₂Ta₂O₇-SnO₂-SnTaO₃ had an obviously tail absorption in the visible region. The excellent photocatalytic activities were found both under UV and visible light irradiation. The improved performance is attributed to the forming of double Z-type composite and the impurity band formed in SnO₂ and Sn₂Ta₂O₇.