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Simulation and optimization of n-type interdigitated back contact silicon heterojunction (IBC-SiHJ) solar cell structure using Silvaco Tcad Atlas
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The optimum geometry of the m>IBCm>-m>SiHJm> is a maximum size emitter and a minimum size m>BSFm>.

The key parameters to have high m>ηm> are high m>cm>-m>Sim> quality and good surface passivation.

The width of the gap region must be kept as small as possible.

If these parameters are controlled, the m>IBCm>-m>SiHJm> can lead to m>ηm> more than 23.20%.

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