Multi-Subband Monte Carlo simulations of I

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• 作者：N. Serra ; P. Palestri ; G.D.J. Smit ; L. Selmi
• 关键词：FinFET ; Multi-Subband Monte Carlo ; Device simulation ; Drift-diffusion model ; Ballistic transport ; Thickness fluctuations
• 刊名：Solid-State Electronics
• 出版年：2009
• 出版时间：April 2009
• 年：2009
• 卷：53
• 期：4
• 页码：424-432
• 全文大小：800 K

文摘

The impact of fin thickness nonuniformities on carrier transport in n-type FinFETs is analyzed with a Multi-Subband Monte Carlo technique, which allows for an accurate description of the quasi-ballistic transport taking place in short channel devices and which comprises the dominant scattering mechanisms as well as a semi-empirical technique to handle quantization effects in the transport direction.

We found that the impact of channel thickness discontinuity on the on-current is larger when the nonuniformities are located close to the Virtual Source of the device. Furthermore, the sensitivity of the on-current to thickness nonuniformity is essentially the same when considering devices with different crystal orientations. Comparison with drift-diffusion simulations reveals substantial differences in the predicted trends of the sensitivity of the drain current to thickness fluctuations in these nanoscale devices.