Rietveld analysis of ferroelectric PbZr_0.525Ti_0.475O₃ thin films

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• 作者：Yogaraksa ; Teguh ; Hikam ; Muhammad ; Irzaman
• 关键词：D. PZT ; Rietveld analysis ; Thin films
• 刊名：Ceramics International
• 出版年：2004
• 出版时间：2004
• 年：2004
• 卷：30
• 期：7
• 页码：1483-1485
• 全文大小：241 K

文摘

A procedure to obtain all the components of crystal structure by simultaneous Rietveld refinement of X-ray diffraction pattern collected is described. The specimens used were lead zircone titanate (PZT) thin films prepared by chemical solution deposition (CSD) and deposited on Si (100) and Si (100)/Pt (200) substrates. The growth condition to obtain high quality epytaxial of thin lead zircone titanate was carried out by spin coating at angular velocities 2500, 3000, 3500rpm for 30s and they were annealed at 750°C for 3h. We made single and multi layers films. For 21 specimens with different treatments, we have refined eight parameters which include lattice parameters, background, absorption coefficient, atomic positions, two theta zero error, thermal factors, and profile peak functions. Most of the samples show that the crystal structures are tetragonal with space group P4mm. Thermal effect and profile function refinement make were fitted better than other effect in the refinement. The plane orientations (100) and (200) sometimes were noticed as an effect of substrate, but it was confirmed indeed the growth of PZT thin film.