Sputtered Si3N4 and SiO2 electron barrier layer between a redox electrolyte and the WO3 film in electrochromic devices
详细信息 查看全文
- 作者：Shankar Bogati ; Andreas georg ; andreas.georg@ise.fraunhofer.de" class="auth_mail" title="E-mail the corresponding author ; Wolfgang Graf
- 关键词：Electrochromic ; Redox electrolyte ; Redox potential ; Coloration efficiency ; Optical density ; Charge transfer resistance ; Loss current
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：395-404
- 全文大小：3819 K
文摘
- •
Sputtered Si3N4 and SiO2 are investigated as electron barrier layer for I−/I−3 and TMTU/TMFDS2+ in electrochromic devices.
- •
Loss currents and optical densities are compared for I−/I−3 and TMTU/TMFDS2+ redox systems.
- •
A significant decrease in loss current is achieved with Si3N4 for both redox electrolytes.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |