Phase controllable synthesis of unusual -Ga₂O₃ single crystals with promising luminescence property

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• 作者：Suxiang Ge ; Zhi Zheng
• 关键词：Semiconductors ; Crystal growth ; X-ray diffraction ; Luminescence
• 刊名：Solid State Sciences
• 出版年：2009
• 出版时间：September 2009
• 年：2009
• 卷：11
• 期：9
• 页码：1592-1596
• 全文大小：434 K

文摘

A new synthetic approach to unusual -Ga₂O₃ with improved luminescence properties was developed by taking advantage of a microwave-assisted synthesis followed by calcinations at appropriate temperatures. Upon control of crystallinities of GaOOH precursors and the followed calcination temperature, the single crystalline -Ga₂O₃ nanorods can be synthesized in a large scale. The resulting products were characterized by transmission electron microscopy, powder X-ray diffraction, and cathodoluminescence. The luminescence property of this unusual Ga₂O₃ phase was investigated for the first time.