Influence of Ge content on formation of radiation defects in Si_1−x

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• 作者：I.G. Atabaev ; N.A. Matchanov ; A. Yusupov ; D.Sh. Saidov ; M.S. Saidov
• 关键词：Alloys ; Semiconductors ; Hardness ; Infrared spectroscopy ; Defects
• 刊名：Computational Materials Science
• 出版年：2008
• 出版时间：December 2008
• 年：2008
• 卷：44
• 期：2
• 页码：832-834
• 全文大小：149 K

文摘

The process of radiation defect formation in bulk Si_1−xGe_x alloy was investigated taking into account the dependence of introduction rates of primary radiation defects on the content of Ge and intensity of irradiation. A new expression was obtained which describes the dependence of divacancy concentration in Si_1−xGe_x alloy at various introduction rates of primary radiation defects under electron, thermal and fast neutron irradiation.