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Influences of post-annealing on structural, morphological and electrical properties of Cd1−xMnxTe films
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文摘

Cd1−xMnxTe films were grown on FTO by close spaced sublimation method.

As-grown films were etched by bromine followed by two separate annealing processes.

Post-annealing on structure and properties of Cd1−xMnxTe films were investigated.

BM/N2 post-annealing treatment is appropriate for preparation of Cd1−xMnxTe film.

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