Analysis of boron in diamond with UV photoluminescence

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• 作者：Hsiao-Chi Lu ; ^{hopelu@nsrrc.org.tw" class="auth_mail" title="E-mail the corresponding author} ; Yu-Chain Peng ; Meng-Yeh Lin ; Sheng-Lung Chou ; Jen-Iu Lo ; Bing-Ming Cheng ; ^{bmcheng@nsrrc.org.tw" class="auth_mail" title="E-mail the corresponding author}
• 刊名：Carbon
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：111
• 期：Complete
• 页码：835-838
• 全文大小：402 K

文摘

Photoluminescence (PL) spectra of boron-doped diamonds at temperature 298 K were recorded with excitation in wavelength range 110–300 nm from a synchrotron source. A prominent emission feature was measured at 480.0 nm, corresponding to energy 2.535 eV; we detected also a distinct photoluminescence excitation (PLE) band at 220.5 nm, 5.623 eV, for the first time. For sensitive analysis, the UV-PL technique provides a non-destructive method; we therefore recommend the use of UV-PL spectra excited in the region 200–230 nm to analyze boron dopant in diamonds. The least detectable concentration of the boron dopant is about 1 × 10¹⁶ atoms cm⁻³.