Facile growth of large-area and high-quality few-layer ReS2 by physical vapour deposition
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- 作者：Fei Qi ; Yuanfu Chen ; yfchen@uestc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Binjie Zheng ; Jinhao Zhou ; Xinqiang Wang ; Pingjian Li ; Wanli Zhang
- 关键词：Rhenium disulfide ; Physical vapour deposition ; Semiconductors ; Few-layer ReS2
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 December 2016
- 年：2016
- 卷：184
- 期：Complete
- 页码：324-327
- 全文大小：1257 K
文摘
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Large-area few-layer ReS2 film was synthesized via physical vapour deposition.
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The centimeter-size ReS2 film is few-layer, continuous and homogenous.
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The few-layer ReS2 film has highly crystalline quality.
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PVD is facile and controllable to grow ReS2 and other 2D semiconductors.
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