Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts
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- 作者：Jun Chen ; junchen@suda.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jiabing Lv ; Qingsong Wang
- 关键词：Al/MoO3/p-InP ; Schottky barrier heights ; Gaussian distribution ; Interfacial insulator layer
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 October 2016
- 年：2016
- 卷：616
- 期：Complete
- 页码：145-150
- 全文大小：1342 K
文摘
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Barrier heights of Al/p-InP Schottky diodes were enhanced by inserting a MoO3 layer.
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Electrical properties of the Al/MoO3/p-InP Schottky diodes were investigated.
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Gaussian distribution was employed to explain the interface barrier inhomogeneity.
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