Study of ultra-shallow p⁺n junctions formed by excimer laser annealing

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• 作者：Miin-Horng Juang ; C.N. Lu ; S.L. Jang ; H.C. Cheng
• 关键词：Ultra-shallow junction ; Excimer laser annealing ; Post low-temperature treatment
• 刊名：Materials Chemistry and Physics
• 出版年：2010
• 出版时间：1 September 2010
• 年：2010
• 卷：123
• 期：1
• 页码：260-263
• 全文大小：536 K

文摘

Excellent ultra-shallow p⁺n junctions have been formed by thermally treating the BF₂⁺-implanted Si samples by excimer laser annealing (ELA) at 300–400 mJ cm⁻² with post low-temperature long-time furnace annealing (FA) at 600 °C. A junction with a leakage current density lower than 20 nA cm⁻² and a sheet resistance smaller than 200 Ω □⁻¹ can be well achieved. No considerable dopant diffusion is observed by using this low-thermal-budget annealing process. However, by simply using the ELA treatment at 300–400 mJ cm⁻², the resultant junction shows a leakage current density as high as 10⁴ nA cm⁻² and a peripheral leakage current density of 10³ nA cm⁻¹. The large junction leakage is primarily due to the leakage current generated within the junction region near the local-oxidation-of-silicon (LOCOS) edge, and which is substantially caused by the ELA treatment. The large peripheral junction leakage current density can be significantly reduced to be about 0.2 nA cm⁻¹ after a post low-temperature FA treatment at 600 °C. As a result, the scheme that employs ELA treatment with post low-temperature FA treatment would be efficient for forming excellent ultra-shallow p⁺n junctions at low thermal budget.