A facile method for fabrication of highly integrated organic field-effect transistors on photoresist-unwettable insulators with remarkable stability
详细信息 查看全文
- 作者：Jincheng Wang ; Xiujuan Zhang ; xjzhang@suda.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Wei Deng ; Qixun Shang ; Liang Wang ; Liubiao Zhong ; Lin Jiang ; Jiansheng Jie ; jsjie@suda.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Metal-assisted photolithography ; Photoresist-unwettable insulators ; Organic field-effect transistors ; Device stability ; Highly integrated
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：34
- 期：Complete
- 页码：104-110
- 全文大小：1904 K
文摘
- •
A metal-assisted photolithography method achieved highly integrated organic devices on photoresist-unwettable insulators.
- •
This method could be applied to fabricate high-flexibility organic field-effect transistors (OFETs).
- •
OFETs fabricated on the photoresist-unwettable insulators exhibited remarkably improved device stability in air.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |