High operating temperature SWIR p+-n FPA based on MBE-grown HgCdTe/Si(0 1 3)
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- 作者：V.M. Bazovkin ; S.A. Dvoretsky ; A.A. Guzev ; A.P. Kovchavtsev ; D.V. Marin ; V.G. Polovinkin ; I.V. Sabinina ; G.Yu. Sidorov ; A.V. Tsarenko ; V.V. Vasil&rsquo ; ev ; V.S. Varavin ; M.V. Yakushev
- 关键词：HgCdTe (MCT) ; Molecular-beam epitaxy (MBE) ; Heterostructure ; p-on-n photodiode ; SWIR FPA ; High operating temperature
- 刊名：Infrared Physics & Technology
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：76
- 期：Complete
- 页码：72-74
- 全文大小：773 K
文摘
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Temperature dependence of the reverse currents of p+–n junctions has been studied.
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SWIR FPA based on In-doped HgCdTe/Si(0 1 3) heterostructure has been fabricated.
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Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured.
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NETD of SWIR FPA has been measured to be ∼40 mK at 170 K which corresponds to theoretical calculations.
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