Strain-driven synthesis of 〈112〉 direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers
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- 作者：Shiyan Li ; Xuliang Zhou ; Xiangting Kong ; Mengke Li ; Junping Mi ; Mengqi Wang ; Jiaoqing Pan ; jqpan@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1 Growth models ; A3 Metal-organic chemical vapor deposition ; B1 Nanomaterials ; B1 Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 September 2016
- 年：2016
- 卷：449
- 期：Complete
- 页码：5-9
- 全文大小：1572 K
文摘
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We reported the 〈112〉 direction growth of InAs nanowires on patterned Si (001).
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We proposed mechanism of 〈112〉 directions InAs nanowires and demonstrated.
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We reported stacking-faults-free ZB InAs nanowires on Si (001).
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InAs nanowires crystal quality was measured by TEM.
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