Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction

详细信息    查看全文

• 作者：Fang Fang^a ;   ; ^b ;   ; ^{fangfang1982131@yahoo.com.cn} ; Dongxu Zhao^c ;   ; ^{dxzhao2000@yahoo.com.cn} ; Xuan Fang^a ;   ; ^b ; Jinhua Li^a ;   ; ^b ; Zhipeng Wei^a ; Shaozhuan Wang^a ; Jilong Wu^a ; Dezhen Shen^c ; Xiaohua Wang^a
• 关键词：A. Thin films ; B. Epitaxial growth ; D. Optical properties
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2012
• 出版时间：February 2012
• 年：2012
• 卷：73
• 期：2
• 页码：217-220
• 全文大小：523 K

文摘

By cadmium allowing of zinc oxide, a phosphor-free single-chip white light emission diode based on n-ZnCdO/p-GaN heterostructure has been realized. The white light electroluminescence was produced by the superposition of two intense emission bands, a blue band and a yellow band. The origins of the blue band was contributed by both GaN and ZnCdO, while the yellow band was from the recombination of the holes and the electrons in the interface of GaN and ZnCdO.