Electron beam evaporation deposition and properties of Abrupt GST/Si heterojunction structure

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• 作者：Wenqiang Liu ; Ling XU ; ^{okxuling@gmail.com} ; Ni Liu ; Yuanbao Liao ; Dong Liu ; Jun Xu ; Zhongyuan Ma ; Kunji Chen
• 关键词：Electron beam evaporation deposition ; Ge2Te2Sb5 thin film ; Abrupt GST/Si heterojunction
• 刊名：Vacuum
• 出版年：2012
• 出版时间：8 February 2012
• 年：2012
• 卷：86
• 期：7
• 页码：804-807
• 全文大小：440 K

文摘

The ternary alloy, Ge₂Te₂Sb₅ is one of the most important compounds of the GeTe-Sb₂Te₃ pseudobinary systems. Ge₂Te₂Sb₅ thin films of thickness of 100?nm-300?nm were deposited by electron beam evaporation. After annealing at different temperatures, we did X-ray diffraction measurement to characterize the structure transformation of the material. In-situ resistance measurement depending on the temperature shows that there is about three orders of magnitude change between the high resistance state (amorphous state) and the low resistance state (face-centered cubic state). To construct a heterojunction diode, we deposited Ge₂Te₂Sb₅ thin films on n-type silicon wafers. Rectification effects were observed in voltage-current measurements of the abrupt heterojunctions. Traditional voltage-current relationship of p-n junctions and metal-semiconductor junctions are used to explain the characteristics of Ge₂Te₂Sb₅/n-Si heterojunctions.