Theoretical Study of the Emission of Light Stimulated by Phonons in Indirect Bandgap Semiconductor

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• 作者：José ; Marí ; a Escalante  ; Ferná ; ndeza  ; ;   ; ^{jmescala@ntc.upv.es} ; Alejandro Martí ; nez  ; Abietar ;   ; ^{amartinez@ntc.upv.es}
• 刊名：Procedia Computer Science
• 出版年：2011
• 出版时间：2011
• 年：2011
• 卷：7
• 期：Complete
• 页码：231-232
• 全文大小：113 K

文摘

Microelectronic device integration has progressed to the point where complete ¡®systems-on-a-chip?have been realized. The development of Complementary Metal-Oxide-Semiconductor (CMOS) technology during the 20^th century has permitted the mass-manufacture of high-performance electronic devices on silicon at low cost. However, electronic integration on silicon has encountered some limits mainly due to the heat generated by the high-speed of data transmission required in modern communications. This is the main reason why CMOS-microelectronics giants such as IBM or Intel have included optical interconnects within their chip manufacturing roadmaps in order to ensure the performance of the Moore's law in the next decades. To this end, several basic building blocks with high performance must be developed fully in silicon and employing CMOS processes. Most of these building blocks (waveguides, filters, photodetectors) have been already developed, as mentioned before, within the field of silicon photonics. However, the issue of efficient generation of light in such photonic circuits remains unsolved. The possible induction of light emission from Si, an indirect bandgap material in which radiative transitions are unlikely, raises several interesting and technologically important possibilities, especially the fabrication of a truly integrated optoelectronic microchip. As a consequence, an electrically-pumped laser working at optical communications wavelengths and at room-temperature fully built using silicon is perhaps the most pursued challenge within photonics .