Direct observation of resistive switching memories behavior from nc-Si embedded in SiO₂ at room temperature

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• 作者：Guoyin Xia ; Zhongyuan Ma ; Xiaofan Jiang ; Huafeng Yang ; Jun Xu ; Ling Xu ; Wei Li ; Kunji Chen ; Duan Feng
• 关键词：Resistive switching memory ; nc-Si film ; Si pathway ; Reduction&ndash ; oxidation process
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2012
• 出版时间：1 September, 2012
• 年：2012
• 卷：358
• 期：17
• 页码：2348-2352
• 全文大小：1187 K

文摘

Unipolar resistive switching memory behavior is directly observed in nanocrystalline Si (nc-Si) film under atmosphere. It is found that the switching is independent of the electrode materials. No resistive switching behavior can be found in reference device without nc-Si. The nc-Si align in a pathway is observed in the HRTEM of the device after voltage was applied. Meanwhile, the same switching behavior as measured under atmosphere is also observed in vacuum. Based on the analysis of the nc-Si film structure and I-V characteristic, we further discuss the mechanism of the switching behavior.