Optimized utilization of NIR spectrum with interfacial TiO₂/SiO₂/TiO₂ trilayer in hybrid-integrated multijunction architecture

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• 作者：Ling Shen^a ; ^{shenling1314@cumt.edu.cn} ; Yifeng Shen^a ; Feng Li^b
• 关键词：NIR spectrum ; TiO2/SiO2/TiO2 trilayer ; Interface reflection ; Transfer printing ; Solar cell
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：160
• 期：Complete
• 页码：425-429
• 全文大小：814 K
• 卷排序：160

文摘

The interfacial TiO2/SiO2/TiO2 trilayer has been used for the first time in hybrid-integrated multijunction architecture. The TiO2/SiO2/TiO2 trilayer has achieved ~15% averaged reflection comparable to As2Se3 in the NIR range of 1200~1800 nm. A similar hort-circuit current density of 7 mA/cm2 has been realized with both As2Se3 and trilayer, even with some air gaps in between. About 5% averaged reflection in the NIR range of 1200~1800nm has been simulated with the ideal top ARC, bringing at least 10% boost of EQE.