Structural and optical characterization of MoS₂ quantum dots defined by thermal annealing

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• 作者：Sung Jae Park ; Sang Woo Pak ; Dongri Qiu ; Ji Hoon Kang ; Da Ye Song ; Eun Kyu Kim ; ^{ek-kim@hanyang.ac.kr}
• 关键词：MoS2 ; Quantum Dot ; CVD ; Thermal annealing
• 刊名：Journal of Luminescence
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：183
• 期：Complete
• 页码：62-67
• 全文大小：3202 K
• 卷排序：183

文摘

We report a new approach to the synthesis of molybdenum disulfide (MoS2) quantum dots (QDs) that uses a single layer MoS2 grown by chemical vapor deposition (CVD) method as a precursor. The MoS2 QDs were formed by a thermal annealing process at 500 °C for 70 h to reduce the particle size. The results indicated that CVD-MoS2 covered almost area of the substrate, which showed a typical single layer thickness and 2H-MoS2 structure. A blue shift from 682 nm to 548 nm wavelength was observed in the photoluminescence (PL) spectra. It shows a successful formation of QDs with 4–7 nm small size from the large sized layers. This process is relatively easy for defining MoS2 QDs with a density of 1011 cm-2 and shows potential advantages for the fabrication of a wide range of electrical optical devices using QDs.