Three-dimensional N-doped, plasma-etched graphene: Highly active metal-free catalyst for hydrogen evolution reaction

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• 作者：Ye Tian^a ; ^{tianyehnu@163.com} ; Yongfei Ye^b ; Xuejun Wang^a ; Shuo Peng^b ; Zhen Wei^b ; Xiao Zhang^b ; ^{Zhangxiao83690@163.com} ; Wuming Liu^c
• 关键词：Hydrogen evolution reaction ; Heteroatoms doping ; N doped graphene ; Three-dimensional graphene ; Plasma-etching
• 刊名：Applied Catalysis A: General
• 出版年：2017
• 出版时间：5 January 2017
• 年：2017
• 卷：529
• 期：Complete
• 页码：127-133
• 全文大小：2843 K
• 卷排序：529

文摘

We developed a three-dimensional (3D), N-doped, plasma-etched graphene (3DNG-P). 3DNG-P could be used as an efficient and robust metal-free HER catalyst. Plasma-etching could create more structural defects on graphene. 3DNG-P combined the merits of 3D porous networks, N-doping and enriched defects. 3DNG-P displayed a favorable HER activity and stability over a wide pH range.