Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms

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• 作者：Yan Zhou^a ; ^b ; ^c ; ^{zhouyanbebe@126.com} ; Guoshun Pan^a ; ^b ; ^c ; ^{pangs@tsinghua.edu.cn} ; Hua Gong^a ; ^b ; ^c ; ^{gh1986313@163.com} ; Xiaolei Shi^a ; ^b ; ^c ; ^{xlshi@tsinghua-sz.org} ; Chunli Zou^a ; ^b ; ^c
• 关键词：Sapphire ; Chemical mechanical polishing ; Silica ; Atomic step structure ; AFM
• 刊名：Colloids and Surfaces A: Physicochemical and Engineering Aspects
• 出版年：2017
• 出版时间：5 January 2017
• 年：2017
• 卷：513
• 期：Complete
• 页码：153-159
• 全文大小：3877 K
• 卷排序：513

文摘

Removal rate of sapphire by 10 nm silica could approach to that by 100 nm silica. The removal mechanisms using different sizes silica have been investigated via XPS. Effects of silica size on the formation and removal of soft layer are studied by AFM. Reaction model of sapphire with silica of different sizes during polishing is proposed. Roughness shows a positive correlation with the size of the solid reaction product.