Removal rate and surface quality of the GLSI silicon substrate during the CMP process

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• 作者：Jiao Hong ; ^{hongjiao072095@163.com} ; Xinhuan Niu ; ^{xhniu@hebut.edu.cn} ; Yuling Liu ; Chenwei Wang ; Baoguo Zhang ; Ming Sun ; Juan Wang ; Liying Han ; Wenqian Zhang
• 关键词：Silicon substrate CMP ; Alkaline slurry ; Silicon removal rate ; Surface roughness ; Haze
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：168
• 期：Complete
• 页码：76-81
• 全文大小：1126 K
• 卷排序：168

文摘

Haze is quantitatively collected on full wafer scale with high throughput. This paper mainly studied the factors affect on silicon CMP which plays an important role for advanced IC manufacturing. A good silicon surface can be obtained by increasing chemical effect or decreasing mechanical effect within a certain scope. The alkaline slurry was a non-hydrogen peroxide based system containing a novel type chelating agent and a surfactant.