Doping of graphene for the application in nano-interconnect

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• 作者：Xiangyu Wu^a ; ^b ; ^{xiangyu.wu@imec.be} ; Inge Asselberghs^b ; Maria Politou^a ; ^b ; Antonino Contino^a ; ^b ; Iuliana Radu^b ; Cedric Huyghebaert^b ; Zsolt Tokei^b ; Bart Soree^a ; ^b ; Stefan De Gendt^a ; ^b ; Steven De Feyter^a ; Marc Heyns^a ; ^b
• 关键词：Graphene ; Nano-interconnects ; Doping ; Mobility ; Sheet resistance
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：5 January 2017
• 年：2017
• 卷：167
• 期：Complete
• 页码：42-46
• 全文大小：664 K
• 卷排序：167

文摘

Doping of graphene with acids can efficiently increase hole concentration through charge transfer process. Resistivity comparable to BEOL metals (e.g. Ru) can be achieved by doping CVD single-layer graphene. Mobility degradation after doping is observed for both single-layer graphene and few-layer graphene. A combination of long range and short range scattering can explain the mobility behavior of single-layer graphene. Doped CVD few-layer graphene shows lower mobility and higher sheet resistance than single-layer graphene.