The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode

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• 作者：N. Shiwakoti^a ; A. Bobby^a ; K. Asokan^b ; Bobby Antony^a ; ^{bobby.iit.ism@gmail.com}
• 关键词：Gallium Phosphide ; Schottky contacts ; SHI irradiation ; Dielectric properties ; Space charge polarization ; Electronic energy loss ; Negative capacitance
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：40-46
• 全文大小：1387 K
• 卷排序：69

文摘

The impact of energy loss mechanism by SHI on Ni/n-GaP Schottky diode The barrier height and donor charge density vary with fluence. The dielectric parameters were altered significantly by the ion fluence. Identified hopping type conduction mechanisms in the intermediate voltage range The changes were explained by electronic energy loss mechanism.