Structural, optical and electrical behavior of millisecond pulse laser damaged silicon-based positive-intrinsic-negative photodiode

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• 作者：Z. Wei ; W. Zhang ; D. Wang ; G.Y. Jin ; ^{jgycust@163.com}
• 关键词：42.62.&ndash ; b ; 85.60.Dw ; 47.20.Hw
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：131
• 期：Complete
• 页码：110-115
• 全文大小：1940 K
• 卷排序：131

文摘

In this work, laser induced optical, electrical parameter degradation and morphological damage have been observed in silicon-based positive-intrinsic-negative (PIN) photodiode. Temperature evolution, surface morphology, damaged area and responsivity are monitored for permanent laser induced change. The 1064 nm laser pulses are reported for values of pulse length τ ranging from 1 ms to 3 ms. The loss of responsivity is corresponding to the temperature and damaged area increased on the upper surface, with the increase of laser fluence, the damaged area is increased, resulting in an increase in decline proportion of responsivity. The damage behavior indicated that the millisecond laser-induced electrical and optical parameter degradation in silicon-based PIN photodiode mainly contributed to the removal of the Si3N4 coating destroyed, redistribution of dopant and the introduction of defects.