Investigation of atomic layer deposition of magnesium oxide on a CoFeB layer for three-dimensional magnetic tunneling junctions

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• 作者：Jeong-Gyu Song ; Jusang Park ; Jaehong Yoon ; Keewon Kim ; Youngman Jang ; Kwangseok Kim ; Hyungjun Kim
• 关键词：Atomic layer deposition ; CoFeB ; Magnesium oxide
• 刊名：Journal of Alloys and Compounds
• 出版年：5 March, 2014
• 年：2014
• 卷：588
• 期：Complete
• 页码：716-719
• 全文大小：1052 K

文摘

In this study, we comparatively investigated thermal- and plasma-enhanced atomic layer deposition (Th- and PE-ALD) of MgO on a CoFeB layer. MgCp₂ (Bis(cyclopentadienyl)magnesium) was used as a Mg precursor and H₂O and O₂ plasma were employed as reactants for the Th- and PE-ALD process, respectively. Th- and PE-ALD MgO formed interlayer between MgO and CoFeB layer due to the oxidation of CoFeB by H₂O and O₂ plasma during the Th- and PE-ALD process. While interlayer formation was observed to be less than 1 nm for Th-ALD MgO, the PE-ALD MgO process resulted in an approximately 5 nm thick, predominantly FeO_x oxidation of CoFeB. This was due to the high reactivity of the O radicals and the higher driving force of Fe for oxidation when compared with Co. Our results show that the Th-ALD MgO process has a better potential as a deposition technique to form tunnel barrier of magnetic tunneling junctions (MTJs).