Air-stable n-type doping of graphene from overlying Si3N4 film
详细信息 查看全文
- 作者：Zegao Wang ; Pingjian Li ; lipingjian@uestc.edu.cn" class="auth_mail ; Yuanfu Chen ; yfchen@uestc.edu.cn" class="auth_mail ; Jingbo Liu ; Fei Qi ; Hongjun Tian ; Binjie Zheng ; Jinhao Zhou
- 关键词：Plasma-enhanced chemical vapor deposition ; Graphene ; Si3N4 ; Dirac point ; N-type doping
- 刊名：Applied Surface Science
- 出版年：15 July 2014
- 年：2014
- 卷：307
- 期：Complete
- 页码：712-715
- 全文大小：780 K
文摘
- listitem" id="list_lis0005">
- •
Air-stable n-type graphene was obtained by depositing Si3N4 film on graphene.
- •
The overlying Si3N4 film can cause an effective n-type doping of graphene.
- •
The Dirac point of graphene can be modulated by the thickness of Si3N4 film.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |