Optimization of laser anneal conditions for implanted shallow p/n-junctions
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- 作者：V. Soncinia ; vsoncini@micron.com" class="auth_mail ; I. Micab ; S. Grassob ; M.L. Polignanob ; M.A. Sansonec ; G. Marguttic ; L. Muzic
- 关键词：Laser Thermal Process ; Boron implant ; TOF-SIMS
- 刊名：Microelectronic Engineering
- 出版年：1 August 2014
- 年：2014
- 卷：125
- 期：Complete
- 页码：51-57
- 全文大小：1662 K
文摘
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Creation of ultra-shallow junction for CMOS-like process and emerging device.
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Keeping Boron in implantation range even if LTP is applied.
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Good activation is also needed.
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Defect studies was achieved by TEM analysis.
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It presents experimental studies of Boron redistribution of B and BF2 implants.
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