Carrier localization in In_0.21Ga_0.79As/GaAs multiple quantum wells: A modified Pässler model for the S-shaped temperature dependence of photoluminescence energy

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• 作者：Ibtissem Fraj ; ^{frajibtissem@yahoo.fr} ; Tarek Hidouri ; Faouzi Saidi ; ^{faouzi.saidi@gmail.com} ; Hassen Maaref
• 关键词：S-shaped form ; Photoluminescence ; High index substrate ; Potential fluctuation ; Modified P&auml ; ssler model
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：351-358
• 全文大小：1971 K
• 卷排序：102

文摘

The localization phenomena in QWs are explained by PL-temperature dependent. S-shaped form in PL peak energy is more pronounced in polar QWs due to PZ field. Modified Pässler model is used to replicate well the S-shaped behavior.